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SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION. FEATURES
Amplifier Output Stage. Complementary to KTA1726.
Q E
A R S
KTC4512
EPITAXIAL PLANAR NPN TRANSISTOR
Recommended for 30W 35W Audio Frequency
F
D
P
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
RATING 80 80 6 6 3 50 150 -55 150
UNIT V V V A A W
K
L C
C
M
M
J
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification R:55~110,
)
TEST CONDITION VCB=80V, IE=0 VEB=6V, IC=0 IC=25mA, IB=0 VCE=4V, IC=2A IC=2A, IB=0.2A VCE=12V, IC=0.5A VCB=10V, IE=0, f=1MHz MIN. 80 55 TYP. 20 150 MAX. 10 10 160 0.5 V MHz pF UNIT A A V
SYMBOL ICBO IEBO V(BR)CEO hFE (Note) VCE(sat) fT Cob O:80~160.
1999. 6. 24
Revision No : 0
O
1
2
3
N
G
MAXIMUM RATING (Ta=25
)
H
T
DIM A B C D E F G H J K L M N O P Q R S T
MILLIMETERS 10.30 MAX 15.30 MAX 0.80 _ 3.60 + 0.20 3.00 6.70 MAX _ 13.60 + 0.50 5.60 MAX 1.37 MAX 0.50 1.50 MAX 2.54 4.70 MAX 2.60 1.50 MAX 1.50 _ 9.50 + 0.20 _ 8.00 + 0.20 2.90 MAX
B
1/3
KTC4512
I C - V CE
COLLECTOR CURRENT I C (A)
mA 50m 00 1 =2 I B= IB
VCE(sat) - I B
0m I B=8 A
A
100 I B=
mA
4
I B =50mA
COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V)
6
3
2
I B =30mA
2
I B =20mA I B =10mA
1
I C =6A
0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE VCE (V)
0 0
I C =2A
I C =4A
0.5
1.0
1.5
BASE CURRENT I B (A)
I C - V BE
6 COLLECTOR CURRENT I C (A)
VCE =4V
h FE - I C
1k DC CURRENT GAIN h FE 500 300
Tc=125 C
Tc=25 C
VCE =4V
4
Tc= 125 C Tc= 25 C
-30
C
100 50 30
Tc=
2
C Tc=-30
0 0 1 BASE-EMITTER VOLTAGE VBE (V) 2
10 0.01
0.03
0.1
0.3
1
3
10
COLLECTOR CURRENT I C (A)
h FE - I C
1k DC CURRENT GAIN h FE 500 300
Tc=125 C Tc=25 C
Tc=-30 C
r th - t w
TRANSITION THERMAL RESISTANCE r th ( C/W) 10 5 3
E AT NO H SINK
VCE =4V
CURVES SHOULD BE APPLIED IN THERMA LIMITED AREA. (SIGLE NONREPETITIVE PULSE)
100 50 30
1 0.5 0.3
10 0.01
0.03
0.1
0.3
1
3
10
0.1 1
3
10
30
100
300
1000
COLLECTOR CURRENT I C (A)
PULSE WIDTH t w (sec)
1999. 6. 24
Revision No : 0
2/3
KTC4512
fT - IE
CUT-OFF FREQUENCY f T (MHz) 30
VCE =-12V
SAFE OPERATING AREA
30 COLLECTOR CURRENT I C (A) 10 5 3 1 0.5 0.3 0.1 0.05 3
I C MAX.(PULSED)* 10ms* 100ms*
20
Tc
2 =1
5
C
T
2 c=
5
C
0 C
Tc
=-3
DC
(T
c=
25
10
C)
0 -0.01
-0.03
-0.1
-0.3
-1 (A)
-3
-10
EMITTER CURRENT I E
*SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE
10
30
100
300
COLLECTOR-EMITTER VOLTAGE VCE (V)
MAXIMUM POWER DISSIPATION PC (W)
Pc - Ta
50 40 30 20 10
(2) (1)Tc=Ta INFINITE HEAT SINK (2)NO NEAT SINK
(1)
0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C)
1999. 6. 24
Revision No : 0
3/3

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